AUIRFZ34N

Specifications

Gate Charge Qg Max Vgs

34nC @ 10V

Case Connection

DRAIN

ECCN Kodu

EAR99

Fall Time Typ

40 ns

Gate To Source Voltage Vgs

20V

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY

Rise Time

49ns

Threshold Voltage

2V

Fabrika Tedarik Süresi

8 Weeks

Drain To Source Breakdown Voltage

55V

Reach Svhc

No SVHC

Terminal Sayısı

3

Seri

HEXFET®

Turn Off Delay Time

31 ns

Uzunluk

10.75mm

Fet Type

N-Channel

Yükseklik

16.13mm

Turn On Delay Time

7 ns

Operating Mode

ENHANCEMENT MODE

Power Dissipation

68W

Vgsth Max Id

4V @ 250μA

Radyasyon Dayanımı

No

Drive Voltage Max Rds On Min Rds On

10V

Jedec95 Code

TO-220AB

Avalanche Energy Rating Eas

65 mJ

Current Continuous Drain Id25

29A Tc

Ambalaj

Tube

Montaj

Through Hole

Vgs Max

±20V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Pin Sayısı

3

Input Capacitance Ciss Max Vds

700pF @ 25V

Drainsource On Resistancemax

0.04Ohm

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2007

Kılıf / Paket

TO-220-3

Element Configuration

Single

Parça Durumu

Obsolete

Genişlik

4.83mm

Transistor Element Material

SILICON