AUIRFZ24NSTRL

Specifications

Ds Breakdown Voltagemin

55V

Fet Type

N-Channel

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Drain To Source Voltage Vdss

55V

Terminal Sayısı

2

Seri

HEXFET®

Terminal Pozisyonu

DUAL

Fabrika Tedarik Süresi

16 Weeks

Tepe Reflow Sıcaklığı (°C)

260

Tepe Reflow Süresi (maks. sn)

30

Gate Charge Qg Max Vgs

20nC @ 10V

Case Connection

DRAIN

ECCN Kodu

EAR99

Pulsed Drain Currentmax Idm

68A

Additional Feature

AVALANCHE RATED

Power Dissipation Max

3.8W Ta 45W Tc

Transistor Application

SWITCHING

Çalışma Sıcaklığı

-55°C~175°C TJ

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Montaj Tipi

Surface Mount

Number Of Elements

1

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2015

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Parça Durumu

Active

Transistor Element Material

SILICON

Terminal Formu

GULL WING

Rds On Max Id Vgs

70m Ω @ 10A, 10V

JESD-609 Kodu

e3

Current Continuous Drain Id25

17A Tc

Ambalaj

Tape & Reel (TR)

Yüzey Montaj

YES

Vgs Max

±20V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain Currentmax Abs Id

17A

Input Capacitance Ciss Max Vds

370pF @ 25V

Drainsource On Resistancemax

0.07Ohm

Vgsth Max Id

4V @ 250μA

Jesd30 Code

R-PDSO-G2