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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Turn On Delay Time
- 26 ns
- Fet Type
- N-Channel
- Reach Svhc
- No SVHC
- Tepe Reflow Sıcaklığı (°C)
- 260
- Gate Charge Qg Max Vgs
- 250nC @ 10V
- Additional Feature
- AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY
- ECCN Kodu
- EAR99
- Fall Time Typ
- 78 ns
- Pulsed Drain Currentmax Idm
- 550A
- Gate To Source Voltage Vgs
- 20V
- Number Of Elements
- 1
- Montaj Tipi
- Through Hole
- Parça Durumu
- Obsolete
- Kılıf / Paket
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Yayın Yılı
- 2010
- JESD-609 Kodu
- e3
- Transistor Element Material
- SILICON
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Current Continuous Drain Id25
- 75A Tc
- Input Capacitance Ciss Max Vds
- 7670pF @ 50V
- Pin Sayısı
- 3
- Vgsth Max Id
- 4V @ 250μA
- Power Dissipation
- 300W
- Uzunluk
- 10.67mm
- Turn Off Delay Time
- 68 ns
- Operating Mode
- ENHANCEMENT MODE
- Yükseklik
- 9.65mm
- Seri
- HEXFET®
- Terminal Sayısı
- 3
- Fabrika Tedarik Süresi
- 13 Weeks
- Threshold Voltage
- 2V
- Rise Time
- 110ns
- Drain To Source Breakdown Voltage
- 100V
- Tepe Reflow Süresi (maks. sn)
- 40
- Transistor Application
- SWITCHING
- Power Dissipation Max
- 300W Tc
- Continuous Drain Current Id
- 130A
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Genişlik
- 4.83mm
- Element Configuration
- Single
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