AUIRFSA8409-7P

Specifications

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgs Max

±20V

Ambalaj

Tube

Montaj

Surface Mount

Current Continuous Drain Id25

523A Tc

Drainsource On Resistancemax

0.00069Ohm

Input Capacitance Ciss Max Vds

13975pF @ 25V

Drain Currentmax Abs Id

360A

Jesd30 Code

R-PSSO-G6

Vgsth Max Id

3.9V @ 250μA

Avalanche Energy Rating Eas

1450 mJ

Drive Voltage Max Rds On Min Rds On

10V

Transistor Application

SWITCHING

Power Dissipation Max

375W Tc

Continuous Drain Current Id

523A

Number Of Elements

1

Montaj Tipi

Surface Mount

Çalışma Sıcaklığı

-55°C~175°C TJ

Parça Durumu

Not For New Designs

Kılıf / Paket

TO-263-7, D2Pak (6 Leads + Tab)

Yayın Yılı

2016

RoHS Durumu

ROHS3 Compliant

Rds On Max Id Vgs

0.69m Ω @ 100A, 10V

Terminal Formu

GULL WING

Transistor Element Material

SILICON

Fabrika Tedarik Süresi

15 Weeks

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Case Connection

DRAIN

Gate Charge Qg Max Vgs

460nC @ 10V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Pulsed Drain Currentmax Idm

1440A

ECCN Kodu

EAR99

Ds Breakdown Voltagemin

40V

Operating Mode

ENHANCEMENT MODE

Drain To Source Voltage Vdss

40V

Configuration

SINGLE WITH BUILT-IN DIODE

Fet Type

N-Channel

Terminal Pozisyonu

SINGLE

Seri

Automotive, AEC-Q101, HEXFET®

Terminal Sayısı

6