AUIRFS4310TRL

Specifications

Seri

HEXFET®

Terminal Sayısı

2

Turn Off Delay Time

68 ns

Fet Type

N-Channel

Turn On Delay Time

26 ns

Operating Mode

ENHANCEMENT MODE

Tepe Reflow Süresi (maks. sn)

30

Gate Charge Qg Max Vgs

250nC @ 10V

Case Connection

DRAIN

Gate To Source Voltage Vgs

20V

Pulsed Drain Currentmax Idm

550A

ECCN Kodu

EAR99

Fall Time Typ

78 ns

Additional Feature

AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY

Rise Time

110ns

Fabrika Tedarik Süresi

16 Weeks

Tepe Reflow Sıcaklığı (°C)

260

Drain To Source Breakdown Voltage

100V

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Yayın Yılı

2013

RoHS Durumu

ROHS3 Compliant

Element Configuration

Single

Parça Durumu

Active

Transistor Element Material

SILICON

Terminal Formu

GULL WING

Rds On Max Id Vgs

7m Ω @ 75A, 10V

JESD-609 Kodu

e3

Continuous Drain Current Id

75A

Power Dissipation Max

300W Tc

Transistor Application

SWITCHING

Çalışma Sıcaklığı

-55°C~175°C TJ

Montaj Tipi

Surface Mount

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Number Of Elements

1

Power Dissipation

300W

Vgsth Max Id

4V @ 250μA

Jesd30 Code

R-PSSO-G2

Radyasyon Dayanımı

No

Drive Voltage Max Rds On Min Rds On

10V

Avalanche Energy Rating Eas

980 mJ