AUIRFS4010-7P

Specifications

Avalanche Energy Rating Eas

330 mJ

Contact Plating

Tin

Drive Voltage Max Rds On Min Rds On

10V

Radyasyon Dayanımı

No

Drainsource On Resistancemax

0.004Ohm

Vgs Max

±20V

Ambalaj

Tube

Montaj

Surface Mount

Rds On Max Id Vgs

4m Ω @ 110A, 10V

Genişlik

9.65mm

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~175°C TJ

Transistor Application

SWITCHING

Power Dissipation Max

380W Tc

Continuous Drain Current Id

190A

Tepe Reflow Süresi (maks. sn)

30

Drain To Source Breakdown Voltage

100V

Fabrika Tedarik Süresi

10 Weeks

Rise Time

56ns

Terminal Pozisyonu

SINGLE

Seri

HEXFET®

Terminal Sayısı

6

Operating Mode

ENHANCEMENT MODE

Configuration

SINGLE WITH BUILT-IN DIODE

Yükseklik

4.83mm

Uzunluk

10.67mm

Turn Off Delay Time

100 ns

Jesd30 Code

R-PSSO-G6

Vgsth Max Id

4V @ 250μA

Power Dissipation

380W

Input Capacitance Ciss Max Vds

9830pF @ 50V

Pin Sayısı

7

Nem Hassasiyeti (MSL)

1 (Unlimited)

Current Continuous Drain Id25

190A Tc

JESD-609 Kodu

e3

Terminal Formu

GULL WING

Transistor Element Material

SILICON

Parça Durumu

Discontinued

Yayın Yılı

2010

Kılıf / Paket

TO-263-7, D2Pak (6 Leads + Tab)