Request a quote for pricing
Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Avalanche Energy Rating Eas
- 330 mJ
- Contact Plating
- Tin
- Drive Voltage Max Rds On Min Rds On
- 10V
- Radyasyon Dayanımı
- No
- Drainsource On Resistancemax
- 0.004Ohm
- Vgs Max
- ±20V
- Ambalaj
- Tube
- Montaj
- Surface Mount
- Rds On Max Id Vgs
- 4m Ω @ 110A, 10V
- Genişlik
- 9.65mm
- RoHS Durumu
- ROHS3 Compliant
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Transistor Application
- SWITCHING
- Power Dissipation Max
- 380W Tc
- Continuous Drain Current Id
- 190A
- Tepe Reflow Süresi (maks. sn)
- 30
- Drain To Source Breakdown Voltage
- 100V
- Fabrika Tedarik Süresi
- 10 Weeks
- Rise Time
- 56ns
- Terminal Pozisyonu
- SINGLE
- Seri
- HEXFET®
- Terminal Sayısı
- 6
- Operating Mode
- ENHANCEMENT MODE
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Yükseklik
- 4.83mm
- Uzunluk
- 10.67mm
- Turn Off Delay Time
- 100 ns
- Jesd30 Code
- R-PSSO-G6
- Vgsth Max Id
- 4V @ 250μA
- Power Dissipation
- 380W
- Input Capacitance Ciss Max Vds
- 9830pF @ 50V
- Pin Sayısı
- 7
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Current Continuous Drain Id25
- 190A Tc
- JESD-609 Kodu
- e3
- Terminal Formu
- GULL WING
- Transistor Element Material
- SILICON
- Parça Durumu
- Discontinued
- Yayın Yılı
- 2010
- Kılıf / Paket
- TO-263-7, D2Pak (6 Leads + Tab)
Related Products
ON Semiconductor
1HN04CH-TL-W
Single MOSFETs Transistors
ON Semiconductor
1HP04CH-TL-W
Single MOSFETs Transistors
Microchip Technology
2N6660
Single MOSFETs Transistors
Microchip Technology
2N6661
Single MOSFETs Transistors
Infineon
2N6788
Single MOSFETs Transistors
ON Semiconductor
2N7000-D26Z
Single MOSFETs Transistors
Microchip Technology
2N7000-G
Single MOSFETs Transistors
ON Semiconductor
2N7000BU
Single MOSFETs Transistors