AUIRFS3206

Specifications

Case Connection

DRAIN

Power Dissipation

300W

Montaj

Surface Mount

Gate Charge Qg Max Vgs

170nC @ 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fabrika Tedarik Süresi

16 Weeks

Drive Voltage Max Rds On Min Rds On

10V

Genişlik

9.65mm

Seri

HEXFET®

Fet Type

N-Channel

Yükseklik

4.83mm

Additional Feature

AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY

Jesd30 Code

R-PSSO-G2

Pin Sayısı

3

Number Of Elements

1

Transistor Application

SWITCHING

Drain To Source Breakdown Voltage

60V

Parça Durumu

Discontinued

Tepe Reflow Sıcaklığı (°C)

260

Tepe Reflow Süresi (maks. sn)

30

Rise Time

82ns

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Fall Time Typ

83 ns

Çalışma Sıcaklığı

-55°C~175°C TJ

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Radyasyon Dayanımı

No

Continuous Drain Current Id

120A

RoHS Durumu

ROHS3 Compliant

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

6540pF @ 50V

Reach Svhc

No SVHC

Contact Plating

Tin

Vgsth Max Id

4V @ 150μA

Gate To Source Voltage Vgs

20V

Power Dissipation Max

300W Tc

Uzunluk

10.67mm

Yayın Yılı

2011

Vgs Max

±20V

Terminal Formu

GULL WING