AUIRFS3107TRL

Specifications

RoHS Durumu

ROHS3 Compliant

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

9370pF @ 50V

Contact Plating

Tin

Vgsth Max Id

4V @ 250μA

Power Dissipation Max

370W Tc

Gate To Source Voltage Vgs

20V

Uzunluk

10.67mm

Yayın Yılı

2011

Vgs Max

±20V

Terminal Formu

GULL WING

Turn Off Delay Time

99 ns

JESD-609 Kodu

e3

Turn On Delay Time

19 ns

Current Continuous Drain Id25

195A Tc

Element Configuration

Single

Ambalaj

Tape & Reel (TR)

Terminal Sayısı

2

Pulsed Drain Currentmax Idm

900A

Rds On Max Id Vgs

3m Ω @ 140A, 10V

Montaj Tipi

Surface Mount

Case Connection

DRAIN

Power Dissipation

370W

Montaj

Surface Mount

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fabrika Tedarik Süresi

16 Weeks

Gate Charge Qg Max Vgs

240nC @ 10V

Drive Voltage Max Rds On Min Rds On

10V

Genişlik

9.65mm

Seri

Automotive, AEC-Q101, HEXFET®

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Yükseklik

4.83mm

Fet Type

N-Channel

Jesd30 Code

R-PSSO-G2

Pin Sayısı

3

Number Of Elements

1

Transistor Application

SWITCHING

Drain To Source Breakdown Voltage

75V

Parça Durumu

Active

Tepe Reflow Sıcaklığı (°C)

260