AUIRFS3006-7P

Specifications

Case Connection

DRAIN

Power Dissipation

375W

Montaj

Surface Mount

Fabrika Tedarik Süresi

16 Weeks

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate Charge Qg Max Vgs

300nC @ 10V

Genişlik

9.65mm

Drive Voltage Max Rds On Min Rds On

10V

Jedec95 Code

TO-263CB

Seri

HEXFET®

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Yükseklik

4.83mm

Terminal Pozisyonu

SINGLE

Fet Type

N-Channel

Configuration

SINGLE WITH BUILT-IN DIODE

Jesd30 Code

R-PSSO-G6

Pin Sayısı

7

Number Of Elements

1

Transistor Application

SWITCHING

Drain To Source Breakdown Voltage

60V

Parça Durumu

Discontinued

Tepe Reflow Sıcaklığı (°C)

260

Tepe Reflow Süresi (maks. sn)

30

Rise Time

61ns

Kılıf / Paket

TO-263-7, D2Pak (6 Leads + Tab)

Fall Time Typ

69 ns

Çalışma Sıcaklığı

-55°C~175°C TJ

Avalanche Energy Rating Eas

303 mJ

ECCN Kodu

EAR99

Radyasyon Dayanımı

No

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

240A

RoHS Durumu

ROHS3 Compliant

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

8850pF @ 50V

Reach Svhc

No SVHC

Contact Plating

Tin

Vgsth Max Id

4V @ 250μA

Power Dissipation Max

375W Tc

Gate To Source Voltage Vgs

20V