AUIRFS3004TRL

Specifications

Fabrika Tedarik Süresi

16 Weeks

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgsth Max Id

4V @ 250μA

Gate Charge Qg Max Vgs

240nC @ 10V

Drive Voltage Max Rds On Min Rds On

10V

Input Capacitance Ciss Max Vds

9200pF @ 25V

Transistor Element Material

SILICON

Case Connection

DRAIN

RoHS Durumu

ROHS3 Compliant

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Ds Breakdown Voltagemin

40V

Jesd30 Code

R-PSSO-G2

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Pozisyonu

SINGLE

Fet Type

N-Channel

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Terminal Formu

GULL WING

Drainsource On Resistancemax

0.00175Ohm

Yayın Yılı

2011

Drain To Source Voltage Vdss

40V

Vgs Max

±20V

Drain Currentmax Abs Id

195A

Power Dissipation Max

380W Tc

Seri

HEXFET®

Ambalaj

Tape & Reel (TR)

Tepe Reflow Süresi (maks. sn)

30

Current Continuous Drain Id25

195A Tc

Tepe Reflow Sıcaklığı (°C)

260

Parça Durumu

Active

Yüzey Montaj

YES

Transistor Application

SWITCHING

JESD-609 Kodu

e3

Number Of Elements

1

Temel Parça No

AUIRFS3004

Montaj Tipi

Surface Mount

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Rds On Max Id Vgs

1.75m Ω @ 195A, 10V

Avalanche Energy Rating Eas

300 mJ

Çalışma Sıcaklığı

-55°C~175°C TJ