AUIRFR5505

Specifications

Jedec95 Code

TO-252AA

Seri

HEXFET®

Fet Type

P-Channel

Yükseklik

2.39mm

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY

Drain To Source Voltage Vdss

55V

Jesd30 Code

R-PSSO-G2

Case Connection

DRAIN

Power Dissipation

57W

Montaj

Surface Mount

Gate Charge Qg Max Vgs

32nC @ 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fabrika Tedarik Süresi

26 Weeks

Drive Voltage Max Rds On Min Rds On

10V

Genişlik

6.22mm

Fall Time Typ

16 ns

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Çalışma Sıcaklığı

-55°C~150°C TJ

ECCN Kodu

EAR99

Radyasyon Dayanımı

No

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

18A

Transistor Application

SWITCHING

Pin Sayısı

3

Number Of Elements

1

Parça Durumu

Obsolete

Drain To Source Breakdown Voltage

-55V

Tepe Reflow Süresi (maks. sn)

30

Tepe Reflow Sıcaklığı (°C)

260

Rise Time

28ns

Gate To Source Voltage Vgs

20V

Power Dissipation Max

57W Tc

Terminal Formu

GULL WING

Uzunluk

6.73mm

Yayın Yılı

2010

Vgs Max

±20V

Turn Off Delay Time

20 ns

RoHS Durumu

ROHS3 Compliant

Input Capacitance Ciss Max Vds

650pF @ 25V

Transistor Element Material

SILICON