Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Jedec95 Code
- TO-252AA
- Seri
- HEXFET®
- Gate To Source Voltage Vgs
- 20V
- Yayın Yılı
- 2010
- Additional Feature
- AVALANCHE RATED, HIGH RELIABILITY
- Fet Type
- P-Channel
- Drainsource On Resistancemax
- 0.065Ohm
- Terminal Formu
- GULL WING
- Turn Off Delay Time
- 39 ns
- Jesd30 Code
- R-PSSO-G2
- Kurşunsuz
- Lead Free
- RoHS Durumu
- ROHS3 Compliant
- Case Connection
- DRAIN
- Power Dissipation
- 110W
- Input Capacitance Ciss Max Vds
- 1200pF @ 25V
- Montaj
- Surface Mount
- Contact Plating
- Tin
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Vgsth Max Id
- 4V @ 250μA
- Gate Charge Qg Max Vgs
- 63nC @ 10V
- Fabrika Tedarik Süresi
- 16 Weeks
- Maks. Çalışma Sıcaklığı
- 175°C
- Kılıf / Paket
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Fall Time Typ
- 63 ns
- Terminal Sayısı
- 2
- Max Power Dissipation
- 110W
- Rds On Max Id Vgs
- 65m Ω @ 16A, 10V
- Avalanche Energy Rating Eas
- 280 mJ
- Min. Çalışma Sıcaklığı
- -55°C
- ECCN Kodu
- EAR99
- Operating Mode
- ENHANCEMENT MODE
- Radyasyon Dayanımı
- No
- Montaj Tipi
- Surface Mount
- Continuous Drain Current Id
- 31A
- Pin Sayısı
- 3
- Number Of Elements
- 1
- Transistor Application
- SWITCHING
- JESD-609 Kodu
- e3
- Drain To Source Breakdown Voltage
- 55V
- Turn On Delay Time
- 14 ns
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