AUIRFR4620TRL

Specifications

Vgs Max

±20V

Drain To Source Voltage Vdss

200V

Yayın Yılı

2015

Terminal Formu

GULL WING

Drainsource On Resistancemax

0.078Ohm

Additional Feature

AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY

Fet Type

N-Channel

Terminal Pozisyonu

SINGLE

Seri

HEXFET®

Jedec95 Code

TO-252AA

Drain Currentmax Abs Id

24A

Power Dissipation Max

144W Tc

Configuration

SINGLE WITH BUILT-IN DIODE

Jesd30 Code

R-PSSO-G2

Ds Breakdown Voltagemin

200V

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

1710pF @ 50V

RoHS Durumu

ROHS3 Compliant

Case Connection

DRAIN

Drive Voltage Max Rds On Min Rds On

10V

Fabrika Tedarik Süresi

16 Weeks

Gate Charge Qg Max Vgs

38nC @ 10V

Vgsth Max Id

5V @ 100μA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

-55°C~175°C TJ

Avalanche Energy Rating Eas

113 mJ

Rds On Max Id Vgs

78m Ω @ 15A, 10V

Pulsed Drain Currentmax Idm

100A

Terminal Sayısı

2

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Montaj Tipi

Surface Mount

Parça Durumu

Active

Number Of Elements

1

Transistor Application

SWITCHING

JESD-609 Kodu

e3

Yüzey Montaj

YES

Ambalaj

Tape & Reel (TR)