AUIRFR4615TRL

Specifications

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

1750pF @ 50V

RoHS Durumu

ROHS3 Compliant

Case Connection

DRAIN

Drive Voltage Max Rds On Min Rds On

10V

Fabrika Tedarik Süresi

16 Weeks

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgsth Max Id

5V @ 100μA

Gate Charge Qg Max Vgs

26nC @ 10V

Vgs Max

±20V

Yayın Yılı

2011

Drain To Source Voltage Vdss

150V

Terminal Formu

GULL WING

Drainsource On Resistancemax

0.042Ohm

Terminal Pozisyonu

SINGLE

Fet Type

N-Channel

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Seri

HEXFET®

Jedec95 Code

TO-252AA

Drain Currentmax Abs Id

33A

Power Dissipation Max

144W Tc

Configuration

SINGLE WITH BUILT-IN DIODE

Jesd30 Code

R-PSSO-G2

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Ds Breakdown Voltagemin

150V

Parça Durumu

Active

Number Of Elements

1

Transistor Application

SWITCHING

JESD-609 Kodu

e3

Yüzey Montaj

YES

Ambalaj

Tape & Reel (TR)

Current Continuous Drain Id25

33A Tc

Tepe Reflow Sıcaklığı (°C)

260

Tepe Reflow Süresi (maks. sn)

30

Çalışma Sıcaklığı

-55°C~175°C TJ

Avalanche Energy Rating Eas

109 mJ

Rds On Max Id Vgs

42m Ω @ 21A, 10V

Pulsed Drain Currentmax Idm

140A

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Sayısı

2