AUIRFR4105ZTRL

Specifications

Fet Type

N-Channel

Additional Feature

AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY

Jedec95 Code

TO-252AA

Seri

HEXFET®

Jesd30 Code

R-PSSO-G2

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Power Dissipation

48W

Case Connection

DRAIN

Gate Charge Qg Max Vgs

27nC @ 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fabrika Tedarik Süresi

16 Weeks

Drive Voltage Max Rds On Min Rds On

10V

Montaj

Surface Mount

Çalışma Sıcaklığı

-55°C~175°C TJ

Avalanche Energy Rating Eas

29 mJ

Fall Time Typ

24 ns

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Continuous Drain Current Id

20A

ECCN Kodu

EAR99

Radyasyon Dayanımı

No

Operating Mode

ENHANCEMENT MODE

Drain To Source Breakdown Voltage

55V

Parça Durumu

Active

Pin Sayısı

3

Number Of Elements

1

Transistor Application

SWITCHING

Rise Time

40ns

Tepe Reflow Sıcaklığı (°C)

260

Tepe Reflow Süresi (maks. sn)

30

Yayın Yılı

2010

Vgs Max

±20V

Drainsource On Resistancemax

0.0245Ohm

Terminal Formu

GULL WING

Power Dissipation Max

48W Tc

Gate To Source Voltage Vgs

20V

Kurşunsuz

Lead Free

Turn Off Delay Time

26 ns

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

740pF @ 25V

RoHS Durumu

ROHS3 Compliant