AUIRFR3806TRL

Specifications

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

1150pF @ 50V

RoHS Durumu

ROHS3 Compliant

Case Connection

DRAIN

Drive Voltage Max Rds On Min Rds On

10V

Fabrika Tedarik Süresi

16 Weeks

Gate Charge Qg Max Vgs

30nC @ 10V

Vgsth Max Id

4V @ 50μA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgs Max

±20V

Yayın Yılı

2011

Drain To Source Voltage Vdss

60V

Terminal Formu

GULL WING

Drainsource On Resistancemax

0.0158Ohm

Additional Feature

HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Fet Type

N-Channel

Terminal Pozisyonu

SINGLE

Seri

HEXFET®

Jedec95 Code

TO-252AA

Power Dissipation Max

71W Tc

Drain Currentmax Abs Id

43A

Jesd30 Code

R-PSSO-G2

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Ds Breakdown Voltagemin

60V

Parça Durumu

Active

Number Of Elements

1

JESD-609 Kodu

e3

Transistor Application

SWITCHING

Yüzey Montaj

YES

Ambalaj

Tape & Reel (TR)

Current Continuous Drain Id25

43A Tc

Tepe Reflow Sıcaklığı (°C)

260

Tepe Reflow Süresi (maks. sn)

30

Çalışma Sıcaklığı

-55°C~175°C TJ

Avalanche Energy Rating Eas

73 mJ

Rds On Max Id Vgs

15.8m Ω @ 25A, 10V

Pulsed Drain Currentmax Idm

170A

Terminal Sayısı

2

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63