AUIRFP4110

Specifications

RoHS Durumu

ROHS3 Compliant

Case Connection

DRAIN

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

9620pF @ 50V

Montaj

Through Hole

Fabrika Tedarik Süresi

16 Weeks

Gate Charge Qg Max Vgs

210nC @ 10V

Vgsth Max Id

4V @ 250μA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drive Voltage Max Rds On Min Rds On

10V

Jedec95 Code

TO-247AC

Seri

HEXFET®

Power Dissipation Max

370W Tc

Drain To Source Voltage Vdss

100V

Yayın Yılı

2014

Vgs Max

±20V

Additional Feature

ULTRA LOW RESISTANCE

Terminal Pozisyonu

SINGLE

Fet Type

N-Channel

Drainsource On Resistancemax

0.0045Ohm

Configuration

SINGLE WITH BUILT-IN DIODE

Jesd30 Code

R-PSFM-T3

Ds Breakdown Voltagemin

100V

Number Of Elements

1

Transistor Application

SWITCHING

Parça Durumu

Active

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Current Continuous Drain Id25

120A Tc

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Reference Standard

AEC-Q101

Ambalaj

Tube

Pulsed Drain Currentmax Idm

670A

Terminal Sayısı

3

Kılıf / Paket

TO-247-3

Çalışma Sıcaklığı

-55°C~175°C TJ

Rds On Max Id Vgs

4.5m Ω @ 75A, 10V

Avalanche Energy Rating Eas

190 mJ

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Montaj Tipi

Through Hole