Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Montaj
- Through Hole
- Reach Svhc
- No SVHC
- Fabrika Tedarik Süresi
- 9 Weeks
- Gate Charge Qg Max Vgs
- 170nC @ 10V
- Vgsth Max Id
- 4V @ 250μA
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Drive Voltage Max Rds On Min Rds On
- 10V
- Genişlik
- 5.31mm
- RoHS Durumu
- ROHS3 Compliant
- Case Connection
- DRAIN
- Transistor Element Material
- SILICON
- Power Dissipation
- 200W
- Input Capacitance Ciss Max Vds
- 4000pF @ 25V
- Turn Off Delay Time
- 43 ns
- Jedec95 Code
- TO-247AC
- Seri
- HEXFET®
- Gate To Source Voltage Vgs
- 20V
- Power Dissipation Max
- 200W Tc
- Yayın Yılı
- 2011
- Uzunluk
- 15.87mm
- Vgs Max
- ±20V
- Fet Type
- N-Channel
- Yükseklik
- 20.7mm
- Additional Feature
- AVALANCHE RATED, HIGH RELIABILITY
- Drainsource On Resistancemax
- 0.008Ohm
- Current Continuous Drain Id25
- 110A Tc
- Element Configuration
- Single
- Rise Time
- 100ns
- Ambalaj
- Tube
- Pin Sayısı
- 3
- Number Of Elements
- 1
- Transistor Application
- SWITCHING
- Drain To Source Breakdown Voltage
- 55V
- Turn On Delay Time
- 14 ns
- Parça Durumu
- Obsolete
- ECCN Kodu
- EAR99
- Radyasyon Dayanımı
- No
- Threshold Voltage
- 2V
- Operating Mode
- ENHANCEMENT MODE
- Montaj Tipi
- Through Hole
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