AUIRFL024NTR

Specifications

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

400pF @ 25V

Power Dissipation

1W

RoHS Durumu

ROHS3 Compliant

Case Connection

DRAIN

Drive Voltage Max Rds On Min Rds On

10V

Fabrika Tedarik Süresi

9 Weeks

Gate Charge Qg Max Vgs

18.3nC @ 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgsth Max Id

4V @ 250μA

Montaj

Surface Mount

Reach Svhc

No SVHC

Vgs Max

±20V

Yayın Yılı

2011

Drainsource On Resistancemax

0.075Ohm

Terminal Formu

GULL WING

Terminal Pozisyonu

DUAL

Fet Type

N-Channel

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY

Seri

HEXFET®

Power Dissipation Max

1W Ta

Gate To Source Voltage Vgs

20V

Drain Currentmax Abs Id

0.0028A

Turn Off Delay Time

22.2 ns

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Kaplaması

Matte Tin (Sn)

Drain To Source Breakdown Voltage

55V

Turn On Delay Time

8.1 ns

Parça Durumu

Obsolete

Number Of Elements

1

Pin Sayısı

4

Transistor Application

SWITCHING

JESD-609 Kodu

e3

Rise Time

13.4ns

Ambalaj

Tape & Reel (TR)

Current Continuous Drain Id25

2.8A Ta

Çalışma Sıcaklığı

-55°C~150°C TJ

Rds On Max Id Vgs

75m Ω @ 2.8A, 10V

Kılıf / Paket

TO-261-4, TO-261AA

Fall Time Typ

17.7 ns