AUIRFB4610

Specifications

Turn Off Delay Time

53 ns

Additional Feature

AVALANCHE RATED, ULTRA-LOW RESISTANCE

Yükseklik

16.51mm

Fet Type

N-Channel

Vgs Max

±20V

Uzunluk

10.66mm

Yayın Yılı

2000

Power Dissipation Max

190W Tc

Gate To Source Voltage Vgs

20V

Seri

HEXFET®

Jedec95 Code

TO-220AB

Genişlik

4.82mm

Drive Voltage Max Rds On Min Rds On

10V

Fabrika Tedarik Süresi

11 Weeks

Gate Charge Qg Max Vgs

140nC @ 10V

Vgsth Max Id

4V @ 100μA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Nominal Vgs

2 V

Reach Svhc

No SVHC

Montaj

Through Hole

Input Capacitance Ciss Max Vds

3550pF @ 50V

Power Dissipation

190W

Transistor Element Material

SILICON

Case Connection

DRAIN

RoHS Durumu

ROHS3 Compliant

Continuous Drain Current Id

73A

Montaj Tipi

Through Hole

Operating Mode

ENHANCEMENT MODE

Threshold Voltage

2V

Radyasyon Dayanımı

No

ECCN Kodu

EAR99

Rds On Max Id Vgs

14m Ω @ 44A, 10V

Çalışma Sıcaklığı

-55°C~175°C TJ

Terminal Sayısı

3

Fall Time Typ

70 ns

Kılıf / Paket

TO-220-3

Pulsed Drain Currentmax Idm

290A

Rise Time

87ns

Ambalaj

Tube

Element Configuration

Single