AUIRFB4410

Specifications

Genişlik

4.83mm

Drive Voltage Max Rds On Min Rds On

10V

Fabrika Tedarik Süresi

13 Weeks

Gate Charge Qg Max Vgs

180nC @ 10V

Vgsth Max Id

4V @ 150μA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Nominal Vgs

2 V

Reach Svhc

No SVHC

Montaj

Through Hole

Input Capacitance Ciss Max Vds

5150pF @ 50V

Power Dissipation

200W

Transistor Element Material

SILICON

RoHS Durumu

ROHS3 Compliant

Turn Off Delay Time

55 ns

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Yükseklik

16.51mm

Fet Type

N-Channel

Vgs Max

±20V

Uzunluk

10.67mm

Yayın Yılı

2010

Power Dissipation Max

200W Tc

Gate To Source Voltage Vgs

20V

Seri

HEXFET®

Jedec95 Code

TO-220AB

Ambalaj

Tube

Rise Time

80ns

Element Configuration

Single

Current Continuous Drain Id25

75A Tc

Parça Durumu

Not For New Designs

Turn On Delay Time

24 ns

Drain To Source Breakdown Voltage

100V

Transistor Application

SWITCHING

Number Of Elements

1

Pin Sayısı

3

Continuous Drain Current Id

75A

Montaj Tipi

Through Hole

Radyasyon Dayanımı

No

Operating Mode

ENHANCEMENT MODE

Threshold Voltage

2V

ECCN Kodu

EAR99