AUIRF9Z34N

Specifications

Rds On Max Id Vgs

100m Ω @ 10A, 10V

Çalışma Sıcaklığı

-55°C~175°C TJ

Terminal Sayısı

3

Fall Time Typ

41 ns

Kılıf / Paket

TO-220-3

Pulsed Drain Currentmax Idm

68A

Continuous Drain Current Id

19A

Montaj Tipi

Through Hole

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Threshold Voltage

-2V

Radyasyon Dayanımı

No

Parça Durumu

Obsolete

Turn On Delay Time

13 ns

Drain To Source Breakdown Voltage

-55V

Transistor Application

SWITCHING

Pin Sayısı

3

Number Of Elements

1

Element Configuration

Single

Rise Time

55ns

Current Continuous Drain Id25

19A Tc

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY

Yükseklik

16.51mm

Fet Type

P-Channel

Uzunluk

10.66mm

Drain To Source Voltage Vdss

55V

Yayın Yılı

2007

Vgs Max

±20V

Power Dissipation Max

68W Tc

Gate To Source Voltage Vgs

20V

Jedec95 Code

TO-220AB

Seri

Automotive, AEC-Q101, HEXFET®

Turn Off Delay Time

30 ns

Input Capacitance Ciss Max Vds

620pF @ 25V

Power Dissipation

68W

Transistor Element Material

SILICON

Case Connection

DRAIN

RoHS Durumu

ROHS3 Compliant

Fabrika Tedarik Süresi

9 Weeks

Gate Charge Qg Max Vgs

35nC @ 10V