AUIRF7769L2TR

Specifications

Ds Breakdown Voltagemin

100V

Configuration

SINGLE WITH BUILT-IN DIODE

Jesd30 Code

R-XBCC-N9

Kurşunsuz

Lead Free

Power Dissipation Max

3.3W Ta 125W Tc

Drain Currentmax Abs Id

20A

Seri

HEXFET®

Drainsource On Resistancemax

0.0035Ohm

Terminal Formu

NO LEAD

Terminal Pozisyonu

BOTTOM

Fet Type

N-Channel

Vgs Max

±20V

Drain To Source Voltage Vdss

100V

Yayın Yılı

2015

Reach Svhc

No SVHC

Montaj

Surface Mount

Drive Voltage Max Rds On Min Rds On

10V

Fabrika Tedarik Süresi

16 Weeks

Gate Charge Qg Max Vgs

300nC @ 10V

Vgsth Max Id

4V @ 250μA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Case Connection

DRAIN

RoHS Durumu

ROHS3 Compliant

Input Capacitance Ciss Max Vds

11560pF @ 25V

Transistor Element Material

SILICON

Montaj Tipi

Surface Mount

Threshold Voltage

2.7V

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Continuous Drain Current Id

375A

Terminal Sayısı

9

Kılıf / Paket

DirectFET™ Isometric L8

Pulsed Drain Currentmax Idm

500A

Avalanche Energy Rating Eas

260 mJ

Rds On Max Id Vgs

3.5m Ω @ 74A, 10V

Çalışma Sıcaklığı

-55°C~175°C TJ

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Current Continuous Drain Id25

375A Tc

Ambalaj

Tape & Reel (TR)