AUIRF7759L2TR

Specifications

Avalanche Energy Rating Eas

257 mJ

Rds On Max Id Vgs

2.3m Ω @ 96A, 10V

Çalışma Sıcaklığı

-55°C~175°C TJ

Kılıf / Paket

DirectFET™ Isometric L8

Fall Time Typ

300 ns

Terminal Sayısı

9

Pulsed Drain Currentmax Idm

640A

Continuous Drain Current Id

160A

Montaj Tipi

Surface Mount

Threshold Voltage

3V

Operating Mode

ENHANCEMENT MODE

Radyasyon Dayanımı

No

ECCN Kodu

EAR99

Parça Durumu

Active

Turn On Delay Time

18 ns

Drain To Source Breakdown Voltage

75V

Transistor Application

SWITCHING

Number Of Elements

1

Pin Sayısı

15

Ambalaj

Tape & Reel (TR)

Rise Time

37ns

Current Continuous Drain Id25

375A Tc

Drainsource On Resistancemax

0.0023Ohm

Fet Type

N-Channel

Terminal Pozisyonu

BOTTOM

Vgs Max

±20V

Yayın Yılı

2015

Power Dissipation Max

3.3W Ta 125W Tc

Gate To Source Voltage Vgs

20V

Drain Currentmax Abs Id

26A

Seri

HEXFET®

Kurşunsuz

Lead Free

Configuration

SINGLE WITH BUILT-IN DIODE

Jesd30 Code

R-XBCC-N9

Turn Off Delay Time

80 ns

Input Capacitance Ciss Max Vds

12222pF @ 25V

Power Dissipation

125W

Transistor Element Material

SILICON

Case Connection

DRAIN

RoHS Durumu

ROHS3 Compliant