AUIRF7737L2TR

Specifications

Additional Feature

HIGH RELIABILITY

Fet Type

N-Channel

Terminal Pozisyonu

BOTTOM

Vgs Max

±20V

Yayın Yılı

2010

Power Dissipation Max

3.3W Ta 83W Tc

Gate To Source Voltage Vgs

20V

Seri

HEXFET®

Kurşunsuz

Lead Free

Terminal Kaplaması

Matte Tin (Sn)

Configuration

SINGLE WITH BUILT-IN DIODE

Turn Off Delay Time

22 ns

Jesd30 Code

R-XBCC-N7

Input Capacitance Ciss Max Vds

5469pF @ 25V

Power Dissipation

83W

Transistor Element Material

SILICON

Case Connection

DRAIN

RoHS Durumu

ROHS3 Compliant

Drive Voltage Max Rds On Min Rds On

10V

Fabrika Tedarik Süresi

16 Weeks

Gate Charge Qg Max Vgs

134nC @ 10V

Vgsth Max Id

4V @ 150μA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj

Surface Mount

Avalanche Energy Rating Eas

386 mJ

Rds On Max Id Vgs

1.9m Ω @ 94A, 10V

Çalışma Sıcaklığı

-55°C~175°C TJ

Pulsed Drain Currentmax Idm

624A

Terminal Sayısı

7

Fall Time Typ

14 ns

Kılıf / Paket

DirectFET™ Isometric L6

Continuous Drain Current Id

31A

Montaj Tipi

Surface Mount

Radyasyon Dayanımı

No

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Parça Durumu

Active

Turn On Delay Time

12 ns

Drain To Source Breakdown Voltage

40V

JESD-609 Kodu

e3