AUIRF7732S2TR

Specifications

Current Continuous Drain Id25

14A Ta

Ambalaj

Tape & Reel (TR)

Rise Time

123ns

Transistor Application

SWITCHING

Pin Sayısı

7

Number Of Elements

1

Parça Durumu

Active

Drain To Source Breakdown Voltage

40V

Montaj Tipi

Surface Mount

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Threshold Voltage

4V

Radyasyon Dayanımı

No

Continuous Drain Current Id

14A

Pulsed Drain Currentmax Idm

220A

Kılıf / Paket

DirectFET™ Isometric SC

Fall Time Typ

37 ns

Terminal Sayısı

3

Rds On Max Id Vgs

6.95m Ω @ 33A, 10V

Avalanche Energy Rating Eas

45 mJ

Çalışma Sıcaklığı

-55°C~175°C TJ

Reach Svhc

No SVHC

Montaj

Surface Mount

Fabrika Tedarik Süresi

16 Weeks

Gate Charge Qg Max Vgs

45nC @ 10V

Vgsth Max Id

4V @ 50μA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drive Voltage Max Rds On Min Rds On

10V

Case Connection

DRAIN

RoHS Durumu

ROHS3 Compliant

Input Capacitance Ciss Max Vds

1700pF @ 25V

Power Dissipation

41W

Transistor Element Material

SILICON

Configuration

SINGLE WITH BUILT-IN DIODE

Jesd30 Code

R-XBCC-N3

Power Dissipation Max

2.5W Ta 41W Tc

Gate To Source Voltage Vgs

16V

Drain Currentmax Abs Id

55A

Seri

HEXFET®

Fet Type

N-Channel