AUIRF7648M2TR

Specifications

Kılıf / Paket

DirectFET™ Isometric M4

Fall Time Typ

14 ns

Avalanche Energy Rating Eas

70 mJ

Çalışma Sıcaklığı

-55°C~175°C TJ

Radyasyon Dayanımı

No

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

14A

Transistor Application

SWITCHING

Pin Sayısı

9

Number Of Elements

1

Parça Durumu

Active

Drain To Source Breakdown Voltage

60V

Rise Time

23ns

Seri

HEXFET®

Additional Feature

HIGH RELIABILITY

Yükseklik

740μm

Fet Type

N-Channel

Terminal Pozisyonu

BOTTOM

Configuration

SINGLE WITH BUILT-IN DIODE

Jesd30 Code

R-XBCC-N5

Case Connection

DRAIN

Power Dissipation

2.5W

Number Of Channels

1

Montaj

Surface Mount

Fabrika Tedarik Süresi

16 Weeks

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate Charge Qg Max Vgs

53nC @ 10V

Drive Voltage Max Rds On Min Rds On

10V

Terminal Sayısı

5

Pulsed Drain Currentmax Idm

272A

Rds On Max Id Vgs

7m Ω @ 41A, 10V

Montaj Tipi

Surface Mount

Threshold Voltage

4V

Max Junction Temperature Tj

175°C

Turn On Delay Time

12 ns

Current Continuous Drain Id25

14A Ta 68A Tc

Ambalaj

Tape & Reel (TR)

Power Dissipation Max

2.5W Ta 63W Tc

Gate To Source Voltage Vgs

20V

Drainsource On Resistancemax

0.007Ohm