AUIRF540Z

Specifications

Turn Off Delay Time

43 ns

Power Dissipation Max

92W Tc

Gate To Source Voltage Vgs

20V

Jedec95 Code

TO-220AB

Seri

HEXFET®

Additional Feature

AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY

Yükseklik

16.51mm

Fet Type

N-Channel

Drainsource On Resistancemax

0.0265Ohm

Uzunluk

10.66mm

Yayın Yılı

2000

Vgs Max

±20V

Nominal Vgs

2 V

Reach Svhc

No SVHC

Montaj

Through Hole

Fabrika Tedarik Süresi

16 Weeks

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgsth Max Id

4V @ 250μA

Gate Charge Qg Max Vgs

63nC @ 10V

Genişlik

4.82mm

Drive Voltage Max Rds On Min Rds On

10V

RoHS Durumu

ROHS3 Compliant

Input Capacitance Ciss Max Vds

1770pF @ 25V

Power Dissipation

92W

Transistor Element Material

SILICON

Montaj Tipi

Through Hole

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Threshold Voltage

2V

Radyasyon Dayanımı

No

Continuous Drain Current Id

36A

Terminal Sayısı

3

Fall Time Typ

39 ns

Kılıf / Paket

TO-220-3

Rds On Max Id Vgs

26.5m Ω @ 22A, 10V

Çalışma Sıcaklığı

-55°C~175°C TJ

Current Continuous Drain Id25

36A Tc

Element Configuration

Single

Rise Time

51ns

Ambalaj

Tube