AUIRF5210STRL

Specifications

Kurşunsuz

Lead Free

Turn Off Delay Time

72 ns

Vgs Max

±20V

Yayın Yılı

2015

Drain To Source Voltage Vdss

100V

Rds On Max

60 mΩ

Fet Type

P-Channel

Seri

HEXFET®

Gate To Source Voltage Vgs

20V

Power Dissipation Max

3.1W Ta 170W Tc

Drive Voltage Max Rds On Min Rds On

10V

Fabrika Tedarik Süresi

16 Weeks

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgsth Max Id

4V @ 250μA

Gate Charge Qg Max Vgs

230nC @ 10V

Montaj

Surface Mount

Power Dissipation

3.1W

Input Capacitance Ciss Max Vds

2780pF @ 25V

RoHS Durumu

ROHS3 Compliant

Tedarikçi Cihaz Paketi

D2PAK

Continuous Drain Current Id

38A

Radyasyon Dayanımı

No

Min. Çalışma Sıcaklığı

-55°C

Montaj Tipi

Surface Mount

Çalışma Sıcaklığı

-55°C~150°C TJ

Drain To Source Resistance

60mOhm

Rds On Max Id Vgs

60mOhm @ 38A, 10V

Maks. Çalışma Sıcaklığı

150°C

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Fall Time Typ

55 ns

Input Capacitance

2.78nF

Rise Time

63ns

Ambalaj

Tape & Reel (TR)

Current Continuous Drain Id25

38A Tc

Drain To Source Breakdown Voltage

-100V

Parça Durumu

Active

Turn On Delay Time

14 ns

Number Of Elements

1

Pin Sayısı

3