AUIRF4905L

Specifications

Seri

HEXFET®

Power Dissipation Max

200W Tc

Gate To Source Voltage Vgs

20V

Yayın Yılı

2012

Drain To Source Voltage Vdss

55V

Uzunluk

10.67mm

Vgs Max

±20V

Yükseklik

9.65mm

Fet Type

P-Channel

Drainsource On Resistancemax

0.02Ohm

Turn Off Delay Time

51 ns

RoHS Durumu

ROHS3 Compliant

Case Connection

DRAIN

Transistor Element Material

SILICON

Power Dissipation

25W

Input Capacitance Ciss Max Vds

3500pF @ 25V

Montaj

Through Hole

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgsth Max Id

4V @ 250μA

Gate Charge Qg Max Vgs

180nC @ 10V

Fabrika Tedarik Süresi

9 Weeks

Drive Voltage Max Rds On Min Rds On

10V

Genişlik

4.83mm

Pulsed Drain Currentmax Idm

280A

Kılıf / Paket

TO-262

Terminal Sayısı

3

Çalışma Sıcaklığı

-55°C~150°C TJ

Rds On Max Id Vgs

20m Ω @ 42A, 10V

ECCN Kodu

EAR99

Radyasyon Dayanımı

No

Operating Mode

ENHANCEMENT MODE

Montaj Tipi

Through Hole

Continuous Drain Current Id

42A

Pin Sayısı

3

Number Of Elements

1

Transistor Application

SWITCHING

Drain To Source Breakdown Voltage

-55V

Turn On Delay Time

20 ns

Parça Durumu

Obsolete

Current Continuous Drain Id25

42A Tc