Volume pricing
- 1+ pcs$2.34
- 10+ pcs$2.21
- 100+ pcs$2.08
- 500+ pcs$1.97
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Turn Off Delay Time
- 80 ns
- Terminal Kaplaması
- Matte Tin (Sn)
- Seri
- HEXFET®
- Power Dissipation Max
- 300W Tc
- Gate To Source Voltage Vgs
- 20V
- Yayın Yılı
- 2010
- Uzunluk
- 10.67mm
- Vgs Max
- ±20V
- Additional Feature
- AVALANCHE RATED, ULTRA-LOW RESISTANCE
- Yükseklik
- 11.3mm
- Fet Type
- N-Channel
- Terminal Pozisyonu
- SINGLE
- Montaj
- Through Hole
- Reach Svhc
- No SVHC
- Gate Charge Qg Max Vgs
- 200nC @ 10V
- Vgsth Max Id
- 4V @ 250μA
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Genişlik
- 4.83mm
- Drive Voltage Max Rds On Min Rds On
- 10V
- RoHS Durumu
- ROHS3 Compliant
- Case Connection
- DRAIN
- Transistor Element Material
- SILICON
- Input Capacitance Ciss Max Vds
- 7820pF @ 25V
- Power Dissipation
- 300W
- ECCN Kodu
- EAR99
- Radyasyon Dayanımı
- No
- Threshold Voltage
- 2V
- Operating Mode
- ENHANCEMENT MODE
- Montaj Tipi
- Through Hole
- Continuous Drain Current Id
- 240A
- Terminal Sayısı
- 7
- Fall Time Typ
- 52 ns
- Kılıf / Paket
- TO-262-7
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Rds On Max Id Vgs
- 2.6m Ω @ 140A, 10V
- Avalanche Energy Rating Eas
- 680 mJ
- Current Continuous Drain Id25
- 160A Tc
- Ambalaj
- Tube
- Rise Time
- 130ns
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