AUIRF3415

Specifications

Jedec95 Code

TO-220AB

Seri

HEXFET®

Power Dissipation Max

200W Tc

Gate To Source Voltage Vgs

20V

Uzunluk

10.66mm

Yayın Yılı

2011

Vgs Max

±20V

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY

Yükseklik

16.51mm

Fet Type

N-Channel

Drainsource On Resistancemax

0.042Ohm

Turn Off Delay Time

71 ns

RoHS Durumu

ROHS3 Compliant

Case Connection

DRAIN

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

2400pF @ 25V

Power Dissipation

200W

Montaj

Through Hole

Nominal Vgs

2 V

Reach Svhc

No SVHC

Fabrika Tedarik Süresi

8 Weeks

Gate Charge Qg Max Vgs

200nC @ 10V

Vgsth Max Id

4V @ 250μA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Genişlik

4.82mm

Drive Voltage Max Rds On Min Rds On

10V

Kılıf / Paket

TO-220-3

Terminal Sayısı

3

Fall Time Typ

69 ns

Çalışma Sıcaklığı

-55°C~175°C TJ

Rds On Max Id Vgs

42m Ω @ 22A, 10V

Avalanche Energy Rating Eas

590 mJ

ECCN Kodu

EAR99

Radyasyon Dayanımı

No

Threshold Voltage

2V

Operating Mode

ENHANCEMENT MODE

Montaj Tipi

Through Hole

Continuous Drain Current Id

43A

Pin Sayısı

3

Number Of Elements

1