AUIRF3205ZS

Specifications

Jesd30 Code

R-PSSO-G2

Fet Type

N-Channel

Yükseklik

4.83mm

Additional Feature

AVALANCHE RATED, ULTRA-LOW RESISTANCE

Seri

HEXFET®

Gate Charge Qg Max Vgs

110nC @ 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fabrika Tedarik Süresi

16 Weeks

Drive Voltage Max Rds On Min Rds On

10V

Genişlik

11.3mm

Montaj

Surface Mount

Power Dissipation

170W

Case Connection

DRAIN

Continuous Drain Current Id

110A

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Radyasyon Dayanımı

No

Avalanche Energy Rating Eas

250 mJ

Çalışma Sıcaklığı

-55°C~175°C TJ

Fall Time Typ

67 ns

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rise Time

95ns

Tepe Reflow Süresi (maks. sn)

30

Tepe Reflow Sıcaklığı (°C)

260

Parça Durumu

Discontinued

Drain To Source Breakdown Voltage

55V

Transistor Application

SWITCHING

Pin Sayısı

3

Number Of Elements

1

Turn Off Delay Time

45 ns

Terminal Formu

GULL WING

Drainsource On Resistancemax

0.0065Ohm

Yayın Yılı

2010

Uzunluk

10.67mm

Vgs Max

±20V

Gate To Source Voltage Vgs

20V

Drain Currentmax Abs Id

75A

Power Dissipation Max

170W Tc

Vgsth Max Id

4V @ 250μA

Contact Plating

Tin