Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Terminal Sayısı
- 3
- Fall Time Typ
- 130 ns
- Kılıf / Paket
- TO-262-3 Wide Leads
- Rds On Max Id Vgs
- 1.4m Ω @ 195A, 10V
- Avalanche Energy Rating Eas
- 470 mJ
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Montaj Tipi
- Surface Mount
- ECCN Kodu
- EAR99
- Radyasyon Dayanımı
- No
- Threshold Voltage
- 2V
- Operating Mode
- ENHANCEMENT MODE
- Continuous Drain Current Id
- 240A
- JESD-609 Kodu
- e3
- Transistor Application
- SWITCHING
- Pin Sayısı
- 3
- Number Of Elements
- 1
- Parça Durumu
- Active
- Turn On Delay Time
- 19 ns
- Drain To Source Breakdown Voltage
- 40V
- Current Continuous Drain Id25
- 240A Tc
- Element Configuration
- Single
- Ambalaj
- Tube
- Rise Time
- 220ns
- Power Dissipation Max
- 375W Tc
- Gate To Source Voltage Vgs
- 20V
- Jedec95 Code
- TO-262AA
- Seri
- HEXFET®
- Additional Feature
- AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- Yükseklik
- 11.3mm
- Fet Type
- N-Channel
- Uzunluk
- 10.67mm
- Yayın Yılı
- 2011
- Vgs Max
- ±20V
- Turn Off Delay Time
- 90 ns
- RoHS Durumu
- ROHS3 Compliant
- Input Capacitance Ciss Max Vds
- 9450pF @ 32V
- Power Dissipation
- 375W
- Transistor Element Material
- SILICON
- Nominal Vgs
- 2 V
- Reach Svhc
- No SVHC
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