AUIRF2903ZL

Specifications

Drain To Source Breakdown Voltage

30V

Parça Durumu

Obsolete

Number Of Elements

1

Pin Sayısı

3

Transistor Application

SWITCHING

Rise Time

100ns

Çalışma Sıcaklığı

-55°C~175°C TJ

Fall Time Typ

37 ns

Kılıf / Paket

TO-262-3 Long Leads, I2Pak, TO-262AA

Continuous Drain Current Id

160A

Radyasyon Dayanımı

No

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Power Dissipation

231W

Case Connection

DRAIN

Genişlik

4.83mm

Drive Voltage Max Rds On Min Rds On

10V

Fabrika Tedarik Süresi

13 Weeks

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate Charge Qg Max Vgs

240nC @ 10V

Montaj

Through Hole

Nominal Vgs

2 V

Fet Type

N-Channel

Terminal Pozisyonu

SINGLE

Yükseklik

9.65mm

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Seri

HEXFET®

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Turn On Delay Time

24 ns

JESD-609 Kodu

e3

Ambalaj

Tube

Current Continuous Drain Id25

160A Tc

Rds On Max Id Vgs

2.4m Ω @ 75A, 10V

Terminal Sayısı

3

Threshold Voltage

2V

Montaj Tipi

Through Hole

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

6320pF @ 25V

RoHS Durumu

RoHS Compliant