AUIRF2805S

Specifications

RoHS Durumu

ROHS3 Compliant

Input Capacitance Ciss Max Vds

5110pF @ 25V

Transistor Element Material

SILICON

Reach Svhc

No SVHC

Vgsth Max Id

4V @ 250μA

Contact Plating

Tin

Drain Currentmax Abs Id

75A

Power Dissipation Max

200W Tc

Gate To Source Voltage Vgs

20V

Drainsource On Resistancemax

0.0047Ohm

Terminal Formu

GULL WING

Vgs Max

±20V

Uzunluk

10.67mm

Yayın Yılı

2011

Turn Off Delay Time

68 ns

JESD-609 Kodu

e3

Turn On Delay Time

14 ns

Current Continuous Drain Id25

135A Tc

Ambalaj

Tube

Element Configuration

Single

Pulsed Drain Currentmax Idm

700A

Terminal Sayısı

2

Rds On Max Id Vgs

4.7m Ω @ 104A, 10V

Montaj Tipi

Surface Mount

Case Connection

DRAIN

Power Dissipation

200W

Nominal Vgs

2 V

Montaj

Surface Mount

Drive Voltage Max Rds On Min Rds On

10V

Genişlik

9.65mm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate Charge Qg Max Vgs

230nC @ 10V

Seri

HEXFET®

Fet Type

N-Channel

Yükseklik

4.83mm

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY

Jesd30 Code

R-PSSO-G2

Transistor Application

SWITCHING

Number Of Elements

1

Pin Sayısı

3