AUIRF2805

Specifications

Turn Off Delay Time

68 ns

Seri

HEXFET®

Jedec95 Code

TO-220AB

Power Dissipation Max

330W Tc

Gate To Source Voltage Vgs

20V

Vgs Max

±20V

Uzunluk

10.66mm

Yayın Yılı

2007

Drainsource On Resistancemax

0.0047Ohm

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY

Yükseklik

16.51mm

Fet Type

N-Channel

Montaj

Through Hole

Nominal Vgs

2 V

Reach Svhc

No SVHC

Genişlik

4.82mm

Drive Voltage Max Rds On Min Rds On

10V

Fabrika Tedarik Süresi

8 Weeks

Gate Charge Qg Max Vgs

230nC @ 10V

Vgsth Max Id

4V @ 250μA

Nem Hassasiyeti (MSL)

1 (Unlimited)

RoHS Durumu

RoHS Compliant

Case Connection

DRAIN

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

5110pF @ 25V

Power Dissipation

330W

Operating Mode

ENHANCEMENT MODE

Threshold Voltage

2V

Radyasyon Dayanımı

No

ECCN Kodu

EAR99

Montaj Tipi

Through Hole

Continuous Drain Current Id

75A

Fall Time Typ

110 ns

Terminal Sayısı

3

Kılıf / Paket

TO-220-3

Pulsed Drain Currentmax Idm

700A

Çalışma Sıcaklığı

-55°C~175°C TJ

Rds On Max Id Vgs

4.7m Ω @ 104A, 10V

Current Continuous Drain Id25

75A Tc

Rise Time

120ns