Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Input Capacitance Ciss Max Vds
- 7978pF @ 25V
- Power Dissipation
- 300W
- RoHS Durumu
- ROHS3 Compliant
- Genişlik
- 4.83mm
- Drive Voltage Max Rds On Min Rds On
- 10V
- Fabrika Tedarik Süresi
- 16 Weeks
- Gate Charge Qg Max Vgs
- 225nC @ 10V
- Vgsth Max Id
- 4V @ 250μA
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj
- Through Hole
- Fet Type
- N-Channel
- Yükseklik
- 9.65mm
- Vgs Max
- ±20V
- Yayın Yılı
- 2010
- Uzunluk
- 10.67mm
- Power Dissipation Max
- 300W Tc
- Gate To Source Voltage Vgs
- 20V
- Drain Currentmax Abs Id
- 240A
- Seri
- HEXFET®
- Turn Off Delay Time
- 71 ns
- Parça Durumu
- Active
- Turn On Delay Time
- 19 ns
- Drain To Source Breakdown Voltage
- 40V
- Number Of Elements
- 1
- Pin Sayısı
- 3
- Rise Time
- 241ns
- Ambalaj
- Tube
- Element Configuration
- Single
- Current Continuous Drain Id25
- 240A Tc
- Rds On Max Id Vgs
- 1.8m Ω @ 187A, 10V
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Fall Time Typ
- 100 ns
- Kılıf / Paket
- TO-262-3 Wide Leads
- Continuous Drain Current Id
- 295A
- Montaj Tipi
- Through Hole
- Radyasyon Dayanımı
- No
- ECCN Kodu
- EAR99
Related Products
ON Semiconductor
1HN04CH-TL-W
Single MOSFETs Transistors
ON Semiconductor
1HP04CH-TL-W
Single MOSFETs Transistors
Microchip Technology
2N6660
Single MOSFETs Transistors
Microchip Technology
2N6661
Single MOSFETs Transistors
In Stock
Infineon
2N6788
Single MOSFETs Transistors
ON Semiconductor
2N7000-D26Z
Single MOSFETs Transistors
Microchip Technology
2N7000-G
Single MOSFETs Transistors
ON Semiconductor
2N7000BU
Single MOSFETs Transistors