Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Input Capacitance Ciss Max Vds
- 6450pF @ 25V
- Transistor Element Material
- SILICON
- RoHS Durumu
- ROHS3 Compliant
- Vgsth Max Id
- 4V @ 250μA
- Contact Plating
- Tin
- Reach Svhc
- No SVHC
- Terminal Formu
- GULL WING
- Uzunluk
- 10.668mm
- Yayın Yılı
- 2010
- Vgs Max
- ±20V
- Drain Currentmax Abs Id
- 270A
- Power Dissipation Max
- 300W Tc
- Gate To Source Voltage Vgs
- 20V
- Kurşunsuz
- Lead Free
- Turn Off Delay Time
- 130 ns
- Turn On Delay Time
- 13 ns
- JESD-609 Kodu
- e3
- Element Configuration
- Single
- Ambalaj
- Tape & Reel (TR)
- Current Continuous Drain Id25
- 195A Tc
- Rds On Max Id Vgs
- 2m Ω @ 75A, 10V
- Terminal Sayısı
- 2
- Montaj Tipi
- Surface Mount
- Threshold Voltage
- 2V
- Power Dissipation
- 300W
- Case Connection
- DRAIN
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fabrika Tedarik Süresi
- 16 Weeks
- Gate Charge Qg Max Vgs
- 240nC @ 10V
- Drive Voltage Max Rds On Min Rds On
- 10V
- Genişlik
- 9.65mm
- Montaj
- Surface Mount
- Yükseklik
- 4.826mm
- Fet Type
- N-Channel
- Seri
- HEXFET®
- Jesd30 Code
- R-PSSO-G2
- Parça Durumu
- Active
- Drain To Source Breakdown Voltage
- 40V
- Transistor Application
- SWITCHING
- Pin Sayısı
- 3
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