AUIRF1404STRL

Specifications

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgsth Max Id

4V @ 250μA

Gate Charge Qg Max Vgs

200nC @ 10V

Fabrika Tedarik Süresi

16 Weeks

Drive Voltage Max Rds On Min Rds On

10V

Case Connection

DRAIN

RoHS Durumu

ROHS3 Compliant

Input Capacitance Ciss Max Vds

7360pF @ 25V

Transistor Element Material

SILICON

Ds Breakdown Voltagemin

40V

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Configuration

SINGLE WITH BUILT-IN DIODE

Jesd30 Code

R-PSSO-G2

Power Dissipation Max

3.8W Ta 200W Tc

Drain Currentmax Abs Id

75A

Seri

HEXFET®

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY

Fet Type

N-Channel

Terminal Pozisyonu

SINGLE

Terminal Formu

GULL WING

Drainsource On Resistancemax

0.004Ohm

Drain To Source Voltage Vdss

40V

Yayın Yılı

2010

Vgs Max

±20V

Tepe Reflow Süresi (maks. sn)

30

Current Continuous Drain Id25

75A Tc

Tepe Reflow Sıcaklığı (°C)

260

Ambalaj

Tape & Reel (TR)

Yüzey Montaj

YES

Transistor Application

SWITCHING

JESD-609 Kodu

e3

Number Of Elements

1

Parça Durumu

Active

Qualification Status

Not Qualified

Montaj Tipi

Surface Mount

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Terminal Sayısı

2

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pulsed Drain Currentmax Idm

650A