Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Avalanche Energy Rating Eas
- 230 mJ
- Maks. Çalışma Sıcaklığı
- 175°C
- Fall Time Typ
- 93 ns
- Kılıf / Paket
- TO-263-7, D2Pak (6 Leads + Tab)
- Continuous Drain Current Id
- 429A
- Operating Mode
- ENHANCEMENT MODE
- Radyasyon Dayanımı
- No
- ECCN Kodu
- EAR99
- Min. Çalışma Sıcaklığı
- -55°C
- Drain To Source Breakdown Voltage
- 24V
- Parça Durumu
- Not For New Designs
- Number Of Elements
- 1
- Pin Sayısı
- 7
- Transistor Application
- SWITCHING
- Rise Time
- 240ns
- Tepe Reflow Sıcaklığı (°C)
- 260
- Tepe Reflow Süresi (maks. sn)
- 30
- Additional Feature
- ULTRA-LOW RESISTANCE
- Yükseklik
- 4.55mm
- Fet Type
- N-Channel
- Seri
- HEXFET®
- Jesd30 Code
- R-XSSO-G6
- Power Dissipation
- 300W
- Case Connection
- DRAIN
- Fabrika Tedarik Süresi
- 39 Weeks
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Gate Charge Qg Max Vgs
- 252nC @ 10V
- Montaj
- Surface Mount
- Max Power Dissipation
- 300W
- Rds On Max Id Vgs
- 1m Ω @ 160A, 10V
- Terminal Sayısı
- 6
- Threshold Voltage
- 2V
- Montaj Tipi
- Surface Mount
- Turn On Delay Time
- 19 ns
- JESD-609 Kodu
- e3
- Ambalaj
- Tube
- Element Configuration
- Single
- Current Continuous Drain Id25
- 240A Tc
- Uzunluk
- 10.35mm
- Yayın Yılı
- 2010
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