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SPW11N60CFD

Single MOSFETs Transistors

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Specifications

Vgsth Max Id
5V @ 500µA
Rds On Max Id Vgs
440mOhm @ 7A, 10V
Technology
MOSFET (Metal Oxide)
Vgs Max
±20V
Power Dissipation Max
125W (Tc)
Çalışma Sıcaklığı
-55°C ~ 150°C (TJ)
Paket
Bulk
Input Capacitance Ciss Max Vds
1200 pF @ 25 V
Ürün Durumu
Active
Gate Charge Qg Max Vgs
64 nC @ 10 V
Channel Type
N
Seri
CoolMOS™
Kılıf / Paket
TO-247-3
Continuous Drain Current Id
11
Power Dissipation
125
Tedarikçi Cihaz Paketi
PG-TO247-3-21
Drain To Source Voltage Vdss
600 V
Montaj Tipi
Through Hole
Drive Voltage Max Rds On Min Rds On
10V
Fet Type
N-Channel
Current Continuous Drain Id25
11A (Tc)

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