SPU03N60C3

Specifications

Turn Off Delay Time

64 ns

Drain To Source Voltage Vdss

600 V

Pin Sayısı

3

Terminal

Through Hole

Dual Supply Voltage

650 V

Drain To Source Resistance

1.4 Ω

Montaj Tipi

Through Hole

Reach Svhc

No SVHC

Min. Çalışma Sıcaklığı

-55 °C

Fet Type

N-Channel

Rise Time

3 ns

Vgs Max

±20V

Element Configuration

Single

Technology

MOSFET (Metal Oxide)

Gate To Source Voltage Vgs

20 V

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Rds On Max

1.4 Ω

Paket

Bulk

Lifecycle Status

NRND (Last Updated: 2 years ago)

Turn On Delay Time

7 ns

Kılıf / Paket

TO-251-3 Short Leads, IPak, TO-251AA

Tedarikçi Cihaz Paketi

PG-TO251-3

Power Dissipation

38 W

Max Power Dissipation

38 W

RoHS

Compliant

Onstate Resistance

1.4 Ω

Drive Voltage Max Rds On Min Rds On

10V

Current Continuous Drain Id25

3.2A (Tc)

Input Capacitance

400 pF

Vgsth Max Id

3.9V @ 135µA

Rds On Max Id Vgs

1.4Ohm @ 2A, 10V

Maks. Çalışma Sıcaklığı

150 °C

Power Dissipation Max

38W (Tc)

Package Quantity

1500

Input Capacitance Ciss Max Vds

400 pF @ 25 V

Ürün Durumu

Active

Gate Charge Qg Max Vgs

17 nC @ 10 V

Radyasyon Dayanımı

No

Nominal Vgs

3 V

Drain To Source Breakdown Voltage

600 V