SPD50N03S2-07G

Specifications

Tradename

OptiMOS

Birim Ağırlık

0.011640 oz

Vgsth Max Id

4V @ 85µA

Kılıf / Paket

TO-252-3

Technology

Si

Fet Type

N-Channel

Typical Turnoff Delay Time

27 ns

Id Continuous Drain Current

50 A

Vgs Gatesource Voltage

- 20 V, + 20 V

Qg Gate Charge

35 nC

Çalışma Sıcaklığı

-55°C ~ 175°C (TJ)

Genişlik

6.22 mm

Configuration

Single

Fabrika Paket Adedi

2500

Vgs Th Gatesource Threshold Voltage

4 V

Power Dissipation Max

136W (Tc)

Minimum Operating Temperature

- 55 C

Maks. Çalışma Sıcaklığı

+ 175 C

Transistor Polarity

N-Channel

Current Continuous Drain Id25

50A (Tc)

Channel Mode

Enhancement

Ürün Tipi

MOSFET

Drain To Source Voltage Vdss

30 V

Ürün Durumu

Active

Rds On Max Id Vgs

7.3mOhm @ 50A, 10V

Paket

Bulk

Seri

OptiMOS®

Pd Power Dissipation

136 W

Drive Voltage Max Rds On Min Rds On

10V

Part Aliases

SP000443920 SPD50N03S207GXT SPD50N03S207GBTMA1

Rds On Drainsource Resistance

7.3 mOhms

Gate Charge Qg Max Vgs

46.5 nC @ 10 V

RoHS

Details

Transistor Type

1 N-Channel

Ambalaj

MouseReel

Vds Drainsource Breakdown Voltage

30 V

Uzunluk

6.5 mm

Tedarikçi Cihaz Paketi

PG-TO252-3-11

Yükseklik

2.3 mm

Montaj Stili

SMD/SMT