SPB03N60C3

Specifications

Gate Charge Qg Max Vgs

17 nC @ 10 V

Technology

MOSFET (Metal Oxide)

Input Capacitance

400 pF

Element Configuration

Single

Vgs Max

±20V

Kılıf / Paket

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Drive Voltage Max Rds On Min Rds On

10V

Continuous Drain Current Id

3.2 A

Ürün Durumu

Active

Paket

Bulk

Min. Çalışma Sıcaklığı

-55 °C

Dual Supply Voltage

650 V

Fet Type

N-Channel

Drain To Source Voltage Vdss

650 V

Max Power Dissipation

38 W

Drain To Source Breakdown Voltage

600 V

Power Dissipation

38 W

Channel Type

N

Terminal

SMD/SMT

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Maks. Çalışma Sıcaklığı

150 °C

Pin Sayısı

3

Seri

CoolMOS™

Vgsth Max Id

3.9V @ 135µA

Kurşunsuz

Lead Free

Turn Off Delay Time

64 ns

Nominal Vgs

3 V

Rds On Max

1.4 Ω

Threshold Voltage

3 V

Halogen Free

Halogen Free

RoHS

Compliant

Turn On Delay Time

7 ns

Akım Değeri

3.2 A

Current Continuous Drain Id25

3.2A (Tc)

Rise Time

3 ns

Voltage Rating Dc

650 V

Reach Svhc

No SVHC

Rds On Max Id Vgs

1.4Ohm @ 2A, 10V

Input Capacitance Ciss Max Vds

400 pF @ 25 V

Ambalaj

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