SPB02N60C3

Specifications

Pin Sayısı

3

Vgsth Max Id

3.9V @ 80µA

Seri

CoolMOS™

Maks. Çalışma Sıcaklığı

150 °C

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Max Power Dissipation

25 W

Drain To Source Breakdown Voltage

600 V

Power Dissipation

25 W

Drain To Source Voltage Vdss

650 V

Channel Type

N

Fet Type

N-Channel

Min. Çalışma Sıcaklığı

-55 °C

Continuous Drain Current Id

1.8 A

Drive Voltage Max Rds On Min Rds On

10V

Paket

Bulk

Ürün Durumu

Active

Kılıf / Paket

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Element Configuration

Single

Vgs Max

±20V

Input Capacitance

200 pF

Gate Charge Qg Max Vgs

12.5 nC @ 10 V

Technology

MOSFET (Metal Oxide)

Gate To Source Voltage Vgs

20 V

Montaj Tipi

Surface Mount

Drain To Source Resistance

3 Ω

Tedarikçi Cihaz Paketi

PG-TO263-3-2

Power Dissipation Max

25W (Tc)

Voltage Rating Dc

650 V

Rise Time

3 ns

Current Continuous Drain Id25

1.8A (Tc)

Rds On Max Id Vgs

3Ohm @ 1.1A, 10V

Input Capacitance Ciss Max Vds

200 pF @ 25 V

Reach Svhc

No SVHC

Turn On Delay Time

6 ns

Akım Değeri

1.8 A

RoHS

Compliant

Halogen Free

Halogen Free

Rds On Max

3 Ω

Threshold Voltage

3 V

Turn Off Delay Time

68 ns