JANTXV2N6849

Specifications

Additional Feature

RADIATION HARDENED

Package Style

CYLINDRICAL

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Pulsed Drain Currentmax Idm

25 A

Number Of Elements

1

Üretici Parça No

JANTXV2N6849

Terminal Pozisyonu

BOTTOM

Avalanche Energy Rating Eas

500 mJ

REACH Uyumluluk Kodu

compliant

Number Of Terminals

3

Package Body Material

METAL

Part Life Cycle Code

Obsolete

Case Connection

DRAIN

Terminal Kaplaması

Tin/Lead (Sn/Pb)

Jesd30 Code

O-MBCY-W3

Transistor Element Material

SILICON

Reference Standard

MILITARY STANDARD (USA)

Terminal Formu

WIRE

Fet Technology

METAL-OXIDE SEMICONDUCTOR

JESD-609 Kodu

e0

Kurşunsuz Kodu

No

Package Description

CYLINDRICAL, O-MBCY-W3

Risk Rank

7.04

Polaritychannel Type

P-CHANNEL

Operating Mode

ENHANCEMENT MODE

Ds Breakdown Voltagemin

100 V

Ihs Manufacturer

MICROSEMI CORP

Transistor Application

SWITCHING

Drain Currentmax Id

6.5 A

Yüzey Montaj

NO

Configuration

SINGLE WITH BUILT-IN DIODE

Jedec95 Code

TO-205AF

ECCN Kodu

EAR99

Drainsource On Resistancemax

0.3 Ω

Package Shape

ROUND

Reflow Temperaturemax S

NOT SPECIFIED

Qualification Status

Qualified

Rohs Code

No