IRF7821TRPBF-1

Specifications

Tedarikçi Cihaz Paketi

8-SOIC

Polaritychannel Type

N-CHANNEL

Paket

Tape & Reel (TR)

Rds On Max Id Vgs

9.1mOhm @ 13A, 10V

Current Continuous Drain Id25

13.6A (Ta)

Drain Currentmax Abs Id

13.6 A

Moisture Sensitivity Levels

1

Part Life Cycle Code

Obsolete

Gate Charge Qg Max Vgs

14 nC @ 4.5 V

Input Capacitance Ciss Max Vds

1010 pF @ 15 V

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Çalışma Sıcaklığı

-55°C ~ 155°C (TJ)

Package Description

,

Seri

HEXFET®

Drain To Source Voltage Vdss

30 V

Vgsth Max Id

1V @ 250µA

REACH Uyumluluk Kodu

compliant

Rohs Code

Yes

Power Dissipation Max

2.5W (Ta)

Vgs Max

±20V

Yüzey Montaj

YES

Reflow Temperaturemax S

NOT SPECIFIED

Risk Rank

5.64

Technology

MOSFET (Metal Oxide)

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

4.5V, 10V

Montaj Tipi

Surface Mount

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

Single

Ürün Durumu

Obsolete

Power Dissipationmax Abs

2.5 W

Operating Temperaturemax

155 °C

Üretici Parça No

IRF7821TRPBF-1

Ihs Manufacturer

INFINEON TECHNOLOGIES AG