IRF7811WPBF

Specifications

Power Dissipationmax Abs

3.1 W

Samacsys Description

IRF7811WPBF N-Channel MOSFET Transistor, 14 A, 30 V HEXFET, 8-Pin SOIC Infineon

Operating Temperaturemin

-55 °C

Ihs Manufacturer

INTERNATIONAL RECTIFIER CORP

Üretici Parça No

IRF7811WPBF

Operating Temperaturemax

150 °C

ECCN Kodu

EAR99

Jedec95 Code

MS-012AA

Drainsource On Resistancemax

0.012 Ω

HTS Kodu

8541.29.00.75

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Tepe Reflow Sıcaklığı (°C)

260

Drain Currentmax Id

14 A

Configuration

SINGLE WITH BUILT-IN DIODE

Risk Rank

5.64

Part Package Code

SOIC

Reflow Temperaturemax S

30

Yüzey Montaj

YES

Transistor Element Material

SILICON

Package Style

SMALL OUTLINE

Number Of Elements

1

JESD-609 Kodu

e3

Terminal Pozisyonu

DUAL

Jesd30 Code

R-PDSO-G8

Rohs Code

Yes

REACH Uyumluluk Kodu

unknown

Terminal Formu

GULL WING

Moisture Sensitivity Levels

1

Part Life Cycle Code

Obsolete

Terminal Kaplaması

Matte Tin (Sn)

Package Description

SMALL OUTLINE, R-PDSO-G8

Number Of Terminals

8

Drain Currentmax Abs Id

14 A

Operating Mode

ENHANCEMENT MODE

Pin Sayısı

8

Package Shape

RECTANGULAR

Polaritychannel Type

N-CHANNEL

Pulsed Drain Currentmax Idm

109 A

Transistor Application

SWITCHING

Ds Breakdown Voltagemin

30 V