IPW65R190E6

Specifications

Rds On Max Id Vgs

190mOhm @ 7.3A, 10V

Montaj Tipi

Through Hole

Part Aliases

IPW65R19E6XK SP000863906 IPW65R190E6FKSA1

Current Continuous Drain Id25

20.2A (Tc)

Package Type

TO-247

Mounting

Through Hole

Vgsth Max Id

3.5V @ 730µA

Rds On Drainsource Resistance

190 mOhms

Vds Drainsource Breakdown Voltage

650 V

Pin Sayısı

3 +Tab

Typical Turnoff Delay Time

133 nS

Channel Type

N

Genişlik

5.21 mm

Transistor Type

1 N-Channel

Ürün Tipi

MOSFET

Input Capacitance Ciss Max Vds

1620 pF @ 100 V

Technology

Si

Continuous Drain Current

20.2(A)

Rad Hardened

No

Operating Temp Range

-55C to 150C

Continuous Drain Current Id

20.2

Channel Mode

Enhancement

RoHS

Details

Yükseklik

21.1 mm

Vgs Max

±20V

Paket

Bulk

Qg Gate Charge

73 nC

Ambalaj

Rail/Tube

Montaj Stili

Through Hole

Drain To Source Voltage Vdss

650 V

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Polarity

N

Number Of Elements

1

Rise Time

12 ns

Tip

Power MOSFET

Fabrika Paket Adedi

240

Drive Voltage Max Rds On Min Rds On

10V

Power Dissipation Max

151W (Tc)

Gate Charge Qg Max Vgs

73 nC @ 10 V

Seri

CoolMOS E6